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- W2352983670 abstract "This paper mainly describes the determination of relative sensitivity factors(RSF) of the key impurities in poly-silicon by direct current glow discharge mass spectrometry(dc-GD-MS).Appropriate content of non-standard poly-silicon samples was molten in furnace under argon atmosphere and cast to ingot.Prior to casting,the B and P key impurities were added to the silicon melt in the range of 1-30 μg/g.Then a series of standard samples were made for the flat cell analysis(20 mm×20 mm×2 mm).The accurate concentrations of the key impurity in these standard samples were determined by secondary ion mass spectrometry(SI-MS) analysis.The key impurities of standard samples were also detected by GD-MS to get the ion intensity and the uncorrected concentration under optimized conditions.The relative sensitivity factors(RSF) of key impurities were calculated by the experimental formula and standard curve method." @default.
- W2352983670 created "2016-06-24" @default.
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- W2352983670 date "2012-01-01" @default.
- W2352983670 modified "2023-09-25" @default.
- W2352983670 title "Determination of Relative Sensitivity Factors of Impurities in Poly-Silicon by Derect Current Glow Discharge Mass Spectrometry" @default.
- W2352983670 hasPublicationYear "2012" @default.
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