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- W2353115716 abstract "Ba0.5Sr0.5TiO3thin films were deposited by R.F. magnetron sputting on RuO2-coated silicon substrates. X- ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to study the phase and surface morphology of the BST films. The results indicate that the BST films deposited at 550 ℃ substrate temperature have higher crystallinity and rougher surface than that of the films deposited at 500 ℃. For dielectric measurements of the BST films, InGa/BST/RuO2 capacitors were fabricated . A 200 nm BST thin film deposited at 550 ℃ with O2/Ar= 5/5 ambience has a dielectric constant of 230 and a dissipation factor of 0.03 at zero bias volage. In the current-voltage curve of BST film deposited at higher substrate temperature, lower leakage current, density in the low bias region and narrower flat region (electron hopping conduction region) are obtained." @default.
- W2353115716 created "2016-06-24" @default.
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- W2353115716 date "2004-01-01" @default.
- W2353115716 modified "2023-09-24" @default.
- W2353115716 title "Dielectric Properties of Sputtered Ba0.5Sr0.5TiO3 Thin Film on Ru02 Bottom Electrode" @default.
- W2353115716 hasPublicationYear "2004" @default.
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