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- W2353528200 abstract "In0.3Ga0.7As epilayers were grown on GaAs substrate by using step-graded buffer layer and low temperature mismatched In0.6Ga0.4As buffer layer respectively. It was shown that the stress in the In0.3Ga0.7As epilayer was released by misfit dislocation generation when adopting the step-graded buffer,which led to form cross-hatch pattern surface morphology. However,the In0.3Ga0.7As epilayer based on the low temperature mismatched buffer was fully relaxed by forming defects in the low temperature layer,and there was no cross-hatch pattern presented in the In0.3Ga0.7As surface. This ultra-thin (50 nm) low temperature mismatched buffer technique was found to be more economical in volume production." @default.
- W2353528200 created "2016-06-24" @default.
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- W2353528200 date "2010-01-01" @default.
- W2353528200 modified "2023-09-24" @default.
- W2353528200 title "Effect of Different Buffer Layer on the Characteristics of the In_(0.3)Ga_(0.7) As Layer Grown on GaAs Substrate" @default.
- W2353528200 hasPublicationYear "2010" @default.
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