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- W2353645270 abstract "KrF excimer laser was applied to the crystallization of the surface layer of amorphous silicon(a-Si) thin films.The influences of laser fluence and frequency of irradiation on the film crystallinity were investigated and the structure and morphology after crystallization were characterized.The results indicated that the laser crystallization threshold of the as-deposit a-Si films is near 110mJ/cm2 and independent of the frequency of irradiation.The laser fluence is the predominant influencing foctor on film crystallinity, though increasing the frequency of irradiation can also improve the crystallinity efficiently when laser fluence is low.It was found that the film affer crystallization is of μc-Si/a-Si double-layer structure, of which the crystallized layer is 400～500nm thick with mean crystal grain size 30～50nm." @default.
- W2353645270 created "2016-06-24" @default.
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- W2353645270 date "2009-01-01" @default.
- W2353645270 modified "2023-09-23" @default.
- W2353645270 title "Crystallization behavior of amorphous silicon thin films induced by excimer laser irradiation" @default.
- W2353645270 hasPublicationYear "2009" @default.
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