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- W2353948810 abstract "Si_3N_4 films have been deposited on Si wafers at temperature range of 100—200℃ by photo-CVD technique.This paper presents the relationship between the deposi-tion rate and other deposition parameters of the films.The physical,chemical and mechani-cal properties of the deposited Si_3N_4fimls are also discussed." @default.
- W2353948810 created "2016-06-24" @default.
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- W2353948810 date "1991-01-01" @default.
- W2353948810 modified "2023-09-28" @default.
- W2353948810 title "LOW-TEMPERATURE Hg SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITED Si_3N_4 FILMS" @default.
- W2353948810 hasPublicationYear "1991" @default.
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