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- W2354139362 abstract "The reactive magnetron sputtering method for growth of HfTiO with high κ gate dielectric on Ge substrate and effects of post deposited annealing in different ambiences(N2,NO and N2O) on device performances are investigated.Results of Transmission Electron Microscope and electrical property measurement indicate that wet N2 annealing can greatly suppress the growth of interlayer and improve the quality of interface,decrease gate leakage current,thus excellent device properties have been achieved: the equivalent oxide thickness of gate dielectric for Al/HfTiO/n-Ge MOS capacitor is 0.81 nm,κ value is 34.5,the interface-state density at midgap is 2.4×1011 cm-2·eV-1,and the gate leakage current at 1 V gate bias is 2.71×10-4 A·cm-2." @default.
- W2354139362 created "2016-06-24" @default.
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- W2354139362 date "2009-01-01" @default.
- W2354139362 modified "2023-09-25" @default.
- W2354139362 title "Effects of Annealing Ambiences on Electrical Properties for Ge MOS Capacitor" @default.
- W2354139362 hasPublicationYear "2009" @default.
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