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- W2354148113 abstract "The patterned Si nanowire arrays as photoanode for photoelectrochemical cells have been successfully fabricated by combining photolithography and by metal-assisted Si chemical etching and energy-conversion properties are investigated.The morphology of Si nanowire arrays is characterized by scanning electron microscopy and anti-reflection property is characterized by hemispherical reflectance spectra.The reflectance of Si nanowire arrays is lower than 5% over the range of 300–1000 nm.The Si nanowire photoelectrochemical cells exhibit a power conversion efficiency of 0.33%.By analyzing the process of photovoltaic conversion,the low conversion efficiency may be attributed to photo-carrier recombination in interface of solid/liquid." @default.
- W2354148113 created "2016-06-24" @default.
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- W2354148113 date "2011-01-01" @default.
- W2354148113 modified "2023-09-27" @default.
- W2354148113 title "Fabrication and energy-conversion properties of Si nanowire arrays photoanode" @default.
- W2354148113 hasPublicationYear "2011" @default.
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