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- W2354837511 abstract "Optical emission spectroscopy(OES),a in situ diagnostic technique,can be used to monitor the state of the plasma in real time.The applications of OES both for fault diagnostics and endpoint detection for ICP silicon plasma etching process were investigated.Based on newly developed high density plasma etcher,poly silicon etching process with etching chemistry HBr/Cl2,the OES data from the plasma etching process wasanalyzed with PCA method,and the chacracteric OES lines which related with the plasma etching were obtained.The challenge of OES technique in the future was also discussed.The results show that the OES technique is a suitable tool for fault diagnostics and endpoint detection in deep sub-micrometer etching process." @default.
- W2354837511 created "2016-06-24" @default.
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- W2354837511 date "2008-01-01" @default.
- W2354837511 modified "2023-09-23" @default.
- W2354837511 title "Application of OES diagnostics on plasma etching" @default.
- W2354837511 hasPublicationYear "2008" @default.
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