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- W2355021210 abstract "A double graded doping drift dominated InP/GaP photodiode is designed and the affections of the dislocations,which are resulted from the mismatch between the epitaxial layer and the substrate,to the device characterizations are studied.The results show the InP/GaP photodiode has very good spectro-response and strong radiation resistance.Particularly it has the inner quantum efficiency over 80%.This means the device performance is less affected by dislocations in crystal that come from the crystal mismatch because of the use of the double graded doping drift dominated structure.The results will be helpful for the design of solar cells used in strong radiation orbits and InP/Si device technology." @default.
- W2355021210 created "2016-06-24" @default.
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- W2355021210 date "2005-01-01" @default.
- W2355021210 modified "2023-09-23" @default.
- W2355021210 title "Investigation of Double Graded Doping Drift Dominated InP/GaP Photodiodes" @default.
- W2355021210 hasPublicationYear "2005" @default.
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