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- W2355129675 abstract "The Schottky diodes of Platinum(Pt) thin film on p-silicon nanowires(p-SiNWs) tips are fabricated.The current-transport mechanism of Pt/p-SiNWs is defect-assisted tunneling(TU).The experimental I-V data is measured and fitted to the analytical expressions of the thermionic emission(TE),generation-recombination(GR),TU,and leakage(RL) current-transport mechanisms in the temperature range of 300~370 K and voltage range of-1~1 V.The TU fitting data is in an excellent agreement with the experimental data.Meanwhile,the main characteristic parameters of Schottky are calculated based on the experimental data.Ideality factor n decreases with increasing temperature.The zero-barrier height Φb0increases with increasing temperature and the tunneling parameter E0 is independent of the temperature,which all are closely followed the TU current-transport mechanism.Hence,those results indicate that defect-assisted tunneling is dominant current-transport mechanism in Pt/p-SiNWs Schottky diodes." @default.
- W2355129675 created "2016-06-24" @default.
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- W2355129675 date "2012-01-01" @default.
- W2355129675 modified "2023-09-22" @default.
- W2355129675 title "Study on Trap-Assisted Tunneling Schottky Diode Based on Silicon Nanowires" @default.
- W2355129675 hasPublicationYear "2012" @default.
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