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- W2356316038 abstract "The silicon doped recrystallized graphite were prepared from filler of calcined coke binder of coal tar pitch and silicon (Si, SiC, SiO 2) by the hot pressing progress in order that the effects of graphitization temperature and composition of doped silicon element on the thermal conductivity, electrical resistivity, bending strength and microstructure of silicon doped recrystallized graphite. Experimental results showed that the thermal conductivity and electrical conductivity improved, but bending strength decreased with increasing graphitization temperature by the same amount of Si. For the high conductivity direction, the thermal conductivity of RG Si 48 was 332W/m·K and the electrical resistivity was 4.94μΩ·m at room temperature with the amount Si of 4wt% by high temperature treatment of 2800℃ after the hot pressing progress. For unit element doped silicon recrystallized graphite with 4wt% of silicon element, the conductive properties of recrystallized graphite was optimized by doping Si, not SiC or SiO 2. No matter silicon composition was Si, SiC, SiO 2 or the graphitization temperature was high of 2800℃, composition analyses indicated that silicon element added to the carbon substrate was in the form of α SiC by XRD. The further analyses discovered that coherence length L a increased and layers spacing of crystalline d 002 decreased with increasing graphitization temperature. The coherence length L a of RG Si 48 was 257nm and layers spacing of microcrystalline d 002 was 0.33577nm." @default.
- W2356316038 created "2016-06-24" @default.
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- W2356316038 date "2002-01-01" @default.
- W2356316038 modified "2023-09-25" @default.
- W2356316038 title "Effect of graphitization temperature and composition of doped silicon on the conductive properties and microstructure of recrystallized graphite" @default.
- W2356316038 hasPublicationYear "2002" @default.
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