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• W2356353295 abstract "We present spatially and spectrally resolved cathodoluminescence investigations on the cross section of semipolar (112¯2) gallium nitride epitaxial layers with high background doping level. The locally varying high carrier concentration leads in emission to a free electron recombination band (FERB) governed on the high energy side by conduction band filling. For the basal plane stacking fault (BSF) of type I1, typically emitting at ≈3.41 eV in low doped GaN, we find a blue shift in emission correlated to the FERB high energy tail. This shift can be perfectly modeled and understood in a quantum well model for the BSF, taking also into account the varying doping level in the barrier region. Thus, the carrier concentration can be finally calculated either from the actual position of the I1 BSF or alternatively from the FERB-related near band edge emission." @default.
• W2356353295 created "2016-06-24" @default.
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• W2356353295 date "2016-05-12" @default.
• W2356353295 modified "2023-09-27" @default.
• W2356353295 title "Stacking fault emission in GaN: Influence of n-type doping" @default.
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• W2356353295 doi "https://doi.org/10.1063/1.4949512" @default.
• W2356353295 hasPublicationYear "2016" @default.
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