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- W2357967586 abstract "Amorphous SiO2 (a-SiO2) films were deposited at 300℃ by plasma-enhanced chemical vapor deposition (PECVD) using SiH4-O2 mixtures. The properties of infrared (IR) absorption for Si-O-Si bonds have been investigated as a function of film thickness, d. Two characteristic absorption peaks at around 1050cm-1 and 1150cm-1 arise from Si-O-Si stretching mode,and one absorption peak at around 800cm-1 is due to Si-O-Si bending mode. It was found that the integrated absorption intensities for the 1050cm-1 and 1150cm-1 bands increase with increasing d. In contrast, the integrated absorption intensities for 800cm-1 band is independent of d. It is suggested that the density of films was independent of d. On the other hand, the apparent absorbance for both 800cm-1 and 1050cm-1 bands, αapp, were found to be linear with increasing d as αapp = k ×d. Consequently, the film thickness for PECVD a-SiO2 can be determined nondestructively using IR absorption techniques." @default.
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- W2357967586 date "2002-01-01" @default.
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- W2357967586 title "A study of PECVD amorphous SiO_2 films using infrared absorption techniques" @default.
- W2357967586 hasPublicationYear "2002" @default.
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