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- W2358215059 abstract "The Ag / Bi FeO_3( BFO) /Pt sandwich of the resistivity random access memory( RRAM) cell was fabricated on the Pt substrate by magnetron sputtering system,and the device can achieve the resistive switching behavior and significantly reduce power consumption under the low compliance current. The cell exhibits a good bipolar I-V hysterias curve,and the switch resistance ratio exceeds one order of magnitude,which can be repeated for more than 500 cycles,while the resistance state can remain more than 1. 8 × 104 s,implying good retention with the low compliance current 0. 5 μA. The resistive switching mechanism of the Ag / BFO / Pt device was analyzed and mainly due to the formation and breaking of the metallic Ag filaments caused by redox reaction of Ag atom in the BFO film." @default.
- W2358215059 created "2016-06-24" @default.
- W2358215059 creator A5017885171 @default.
- W2358215059 date "2015-01-01" @default.
- W2358215059 modified "2023-09-23" @default.
- W2358215059 title "Low Current Resistive Switching Behavior in BiFeO_3 Thin Films with Ag Electrode" @default.
- W2358215059 hasPublicationYear "2015" @default.
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