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- W2359699980 abstract "Quantum dots (QDs) samples studied in the experiment were grown by molecular-beam epitaxy on a semi-insulating GaAs substrate. They are undoping QD sample,n-doping QD sample and p-doping QD sample. The samples grown in sequence are:400 nm GaAs layer,100 nm Al0.5Ga0.5As layer,0.36 nm GaAs layer with the Si-doping (1.5×1016 cm-3),or Be-doping (1×1017 cm-3),10 nm GaAs layer,2.35 monolayers (ML) InAs at a growth rate of 0.001 ML/s,200 nm GaAs layer. For undoping QD sample,there is a non Si or Be doped 0.36 nm GaAs layer. The sample has an ultralow density of the QDs. Therefore,we can isolate single QDs without the use of the nanoscaled masks or mesas. In the experiment the sample was cooled to 5 K and a Ti:sapphire laser operating at 750 nm is used as an excitation source. The scanning confocal microscopy with an objective (NA:0.5) is used to spatially resolve single QDs. The polarized photoluminescence (PL) and time-resolved PL measurements were carried out by time-correlated single-photon counting setup. The excitation light is a right circular polarization light. The polarization PL and time-resolved PL emissions were analyzed by a λ/4 and λ/2 wave plate and a linear polarizer to distinguish different polarization components. All the experiments were performed at low excitation power,which ensures the luminescence working in the single photon emission mode. The main conclusions were given:(1) The exciton-spin relaxation time for undoping QD sample is about 16 ns;(2) The electron spin-flip time is about 2 ns for p-doping QD sample;(3) The hole spin-flip time is about 50 ps for n-doping QD sample." @default.
- W2359699980 created "2016-06-24" @default.
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- W2359699980 date "2009-01-01" @default.
- W2359699980 modified "2023-09-22" @default.
- W2359699980 title "Electron-and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots" @default.
- W2359699980 hasPublicationYear "2009" @default.
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