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- W2359797003 abstract "X-ray lithography, one of the next generational lithography (NGL) techniques, is of great concern, and the process of the mask is the most important part. The temperature distribution on the surface of the mask, during postexposure baking(PEB) of the X-ray mask after electron beam writing(EBW), is very important for controlling the mask CD. If the temperature isn't controlled well, it will lead to the non-uniform temperature distribution of the resist, which will induce the bad mask CD distribution. In this paper, the thermal model of the X-ray mask, during PEB process after EBW, has been set up and the transient thermal analysis has been given by using the finite element method. The numerical results indicate that if PEB is used in manner of post-baking the bottom surface, high temperature region and low temperature region appear when it gets steady and the maximum temperature difference is 10.19℃, which will quite likely make parts of the resist baked excessively. If PEB is used in manner of post-baking the top surface, it will take less time for the mask to get steady and the temperature distribution is uniform, and the baking effect is much better." @default.
- W2359797003 created "2016-06-24" @default.
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- W2359797003 date "2003-01-01" @default.
- W2359797003 modified "2023-09-23" @default.
- W2359797003 title "Transient Thermal Analysis of X-ray Lithography Mask during Post-exposure baking" @default.
- W2359797003 hasPublicationYear "2003" @default.
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