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- W2360296025 abstract "Two-step method was adopted to grow InP on GaAs(100) substrates by metalorganic chemical vapor deposition(MOCVD),morphology of low-temperature buffer(LTB) layers and epilayers were analyzed by atomic force microscopy(AFM).The morphology of epitaxial layers inherites that of LTB layers,heat-treatment processes make buffer layers rougher,their root-mean-square(RMS) has the smallest value when LTB growth temperature is 450℃,it is consistent with the result of X-ray diffraction measurements.Compared with LTB layers,two dimensional(2D) growth is successfully realized in epilayers." @default.
- W2360296025 created "2016-06-24" @default.
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- W2360296025 date "2007-01-01" @default.
- W2360296025 modified "2023-09-26" @default.
- W2360296025 title "Morphology of low temperature buffer layers and itsinfluence on InP epilayer growth" @default.
- W2360296025 hasPublicationYear "2007" @default.
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