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• W2361243145 abstract "Ni/TiO2/4H-SiC diodes were analysed through measurements of current–voltage curves varying the temperature. The Schottky Barrier Height (SBH) which increased with temperature was studied by simulation of the Thermionic Emission Model, considering Ni/SiC Schottky structures with an insulator layer between the metal and semiconductor. This model shows that a new method of calculation should be applied to diodes that have a metal–insulator–semiconductor structure. Misleading results for SBH are obtained if the thin insulator layer is not considered. When applying the suggested method to the Ni/TiO2/4H-SiC diodes it was necessary to consider not only the deposited TiO2 layer, but also a second dielectric layer of native SiCxOy at the surface of SiC. By measuring I–V–T curves for two samples with different thicknesses of TiO2, the suggested method allows one to estimate the thicknesses of both dielectric layers: TiO2 and SiOxCy." @default.
• W2361243145 created "2016-06-24" @default.
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• W2361243145 date "2015-10-26" @default.
• W2361243145 modified "2023-09-27" @default.
• W2361243145 title "Schottky barrier height of Ni/TiO2/4H-SiC metal-insulator-semiconductor diodes" @default.
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• W2361243145 doi "https://doi.org/10.1088/0268-1242/30/12/125002" @default.
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