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- W2362445964 abstract "Total ionizing dose effects of commercial 256 kb and 1 Mb CMOS SRAM of ETC Company were investigated under different bias conditions,including static bias condition and dynamic bias condition.Responses of power consumption current and number of function errors to total ionizing dose were obtained.Results showed that power consumption current increased obviously with total dose,which could be used as sensitive parameter to characterize irradiation damage of SRAM device;but the number of function errors was not in pace with power consumption current,and its increase did not inevitably mean the increase of power consumption current,which is mainly because the failure of SRAM device is caused by negative drift of gate threshold voltage,while the increase of power consumption current is mainly due to current leakage of both gate oxide and field oxide caused by negative drift of threshold voltage." @default.
- W2362445964 created "2016-06-24" @default.
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- W2362445964 date "2013-01-01" @default.
- W2362445964 modified "2023-09-23" @default.
- W2362445964 title "Study on Irradiation Effects of CMOS SRAMs with Different Scale" @default.
- W2362445964 hasPublicationYear "2013" @default.
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