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- W2362649941 abstract "Preparation of hydrogenated microcrystalline silicon(μc-Si:H) thin film by VHF-PECVD can reach to a higher growth rate,but a poorer film quality,which is due to the generation of a thick amorphous incubation layer during the initial growth.The research in this paper showed that the thickness of incubation layer is closely related to the silane concentration and input power density.Lower silane concentration can guarantee the probability of hydrogen breaking the weak bond,and thin film obviously exhibits layer by layer growth mechanism.Higher input power could drive more hydrogen atoms to the film surface for growth reaction.Through the optimization of these two conditions,the thickness of incubation layer is decreased to 26.55 nm." @default.
- W2362649941 created "2016-06-24" @default.
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- W2362649941 date "2011-01-01" @default.
- W2362649941 modified "2023-09-26" @default.
- W2362649941 title "Further study of the incubation layer in hydrogenated microcrystalline silicon film growth" @default.
- W2362649941 hasPublicationYear "2011" @default.
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