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- W2362795894 abstract "Highly oriented AlN films were fabricated on p-Si(100) substrates at room temperature by pulsed laser deposition(PLD),and the effect of N2 pressure on the quality of the films was studied by XRD,FTIR and SEM investigations.The results show that all films deposited over a large range of N2 pressures from 5×10-6 Pa to 5.0 Pa exhibit good crystal properties with sharp X-ray diffraction peaks at 2θ=33.15°,corresponding to AlN h100 crsytalline orientation.The crystallinity of the films gets remarkably better when the N2 pressure rises from 5×10-6 Pa to 5.0 Pa.Furthermore,the combination of A1-N bond is strengthened when the density of N2 increases,but the surface morphology of the films get rougher." @default.
- W2362795894 created "2016-06-24" @default.
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- W2362795894 date "2007-01-01" @default.
- W2362795894 modified "2023-09-26" @default.
- W2362795894 title "Highly Oriented AlN Thin Films Grown on Si(100) Substrates at Room Temperature by Pulsed Laser Deposition" @default.
- W2362795894 hasPublicationYear "2007" @default.
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