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- W2363548254 abstract "ZnO film is attracting more attention because of its ultraviolet emission at room temperature and its poten-tial applications in ultraviolet photoelectron devices in recent years. For the applications preparation of good-qualityZnO films and strong ultraviolet emission in films are requested. Annealing in different ambiences is a good methodto improve the quality and to change the stoichiometrical composition. ZnO films were prepared by direct current reaction sputtering and annealed in different oxygen partial pressures(P_(O_2)). The laser lasing on the films was observed from the time resolution spectrum. X-ray diffraction analysisshows that the crystal constants decrease and the gain sizes of films increase with P_(O_2), these analysis and images offilms by atom force microscopy show that the qualities of ZnO films were improved by annealing in oxygen ambi-ences. The influences of annealing P_(O_2) on photoluminescence (PL) and its relation to native defects were investi-gated also. We found that the intensities of ultraviolet photoluminescence were increased with oxygen partial pres-sures in certain range of P_(O_2) due to the improvement of the structure of films. But in higher P_(O_2), ultraviolet intensi-ties decreased and green intensities increased instead. We suggest that more excitation energy was transferred to green center because of the generation of more acceptors in higher P_(O_2) that these acceptors act as green emissioncenter in the films, the refore UV was decreased, green was increased. The compositions analyses in depth of sam-ples A and E by Auger electron spectra show that A film (annealed in pure N_2 ambience) has stoichiometry of[Zn]/[O]1 and Samples E (in pure O_2) has that of [Zn]/[O]1, it indicates there are more donor defects inSample A and more acceptors in Sample E. The I-V curves of the junctions Sample E indicates the more acceptorsgenerated in the ZnO film and may inversed to p-type semiconductor due to annealing in higher P_(O_2)." @default.
- W2363548254 created "2016-06-24" @default.
- W2363548254 creator A5001002027 @default.
- W2363548254 date "2004-01-01" @default.
- W2363548254 modified "2023-09-22" @default.
- W2363548254 title "Influence of Oxygen Annealing on Ultraviolet Emission of znO Films" @default.
- W2363548254 hasPublicationYear "2004" @default.
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