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• W2363818063 abstract "The ZnO homogeneous pn junction photodiode is quite difficult to fabricate due to the absence of stable p-type ZnO. So exploring reliable p-type materials is necessary to build a heterogeneous pn junction with n-type ZnO. Herein, we develop a simple and low-cost solution-processed method to obtain inorganic p-type CuI/CuSCN composite film with compact morphology, high conductivity, and low surface state. The improved performance of CuI/CuSCN composite film can be confirmed based on high-rectification ratio, responsivity, and open voltage of ZnO-CuI/CuSCN photodiode UV detectors. Moreover, photodiodes with novel top electrodes are investigated. Compared with commonly used Au and graphene/Ag nanowire (NWs) electrode, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PSS) electrode prepared by Meyer rod-coating technique opens one route to obtain a semitransparent photodiode. The photodiode withPSS as the top electrode under reverse illumination has the highest photocurrent density due to higher UV transmittance ofPSS transparent electrode compared with ITO glass. The low-energy consumption, and high responsivity, UV to visible rejection ratio and air stability make this ZnO-CuI/CuSCN photodiode quite promising in the UV-A detection field." @default.
• W2363818063 created "2016-06-24" @default.
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• W2363818063 date "2015-09-18" @default.
• W2363818063 modified "2023-10-15" @default.
• W2363818063 title "Semi-Transparent ZnO-CuI/CuSCN Photodiode Detector with Narrow-Band UV Photoresponse" @default.
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• W2363818063 doi "https://doi.org/10.1021/acsami.5b05222" @default.
• W2363818063 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/26352523" @default.
• W2363818063 hasPublicationYear "2015" @default.
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