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- W2363899679 abstract "Monocrystalline GaAs layer grown on (100),(111) and (211) Si substrate by hot wall epitaxy two-step growth and direct growth is reported.Having compared two-step growth with direct growth, some conclusion can be drawn from the measurement of Raman,Hall and photoluminescence.First,the quality of GaAs layer fabricated by two-step growth is better than that fabricated by direct growth on the same Si substrate.And second,buffer layer (BL) is the base of lower dislocation and higher crystal quality.Lastly,different Si substrates will affect the quality of GaAs layer,i.e.,the quality of GaAs layer on (111) Si substrate is the worst,while the quality of GaAs layer on (211) Si substrate is the best." @default.
- W2363899679 created "2016-06-24" @default.
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- W2363899679 date "2002-01-01" @default.
- W2363899679 modified "2023-09-25" @default.
- W2363899679 title "Comparison of Two-step Growth and Direct Growth for GaAs on Si" @default.
- W2363899679 hasPublicationYear "2002" @default.
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