Matches in SemOpenAlex for { <https://semopenalex.org/work/W2364216897> ?p ?o ?g. }
Showing items 1 to 71 of
71
with 100 items per page.
- W2364216897 abstract "Zinc oxide (ZnO) is a wide gap semiconductor with band gap of 3.37 eV and binding energy of 60 meVat RT. This material was expected for ultraviolet emissive device related to exciton effect at RT. For fabrication ofhigh-quality ZnO thin films, most effort was performed. Previous work, including selected lattice match substrate(GaN, bulk ZnO or ScAlMgO_4), employed buffer layer (MgO), annealing at high temperature, was successfully made to obtain high-quality ZnO thin films. In this paper, we chose c-plane sapphire (Al_2O_3) as a substrate ofZnO thin film. At the optimum temperature, the high-quality ZnO thin films were fabricated. During growth process, the high pure Zn source (6N) was evaporated at 245℃ by Knudsen cell and oxygenwas cracked by an rf plasma atomic source (13.56 MHz). Both basal pressures of Zn and oxygen were fixed at5×10~(-5) and 3×10~(-3) Pa, respectively. The chemical cleaned substrate was transferred into growth chamber andthen was exposed in plasma oxygen atmosphere at 650℃. Reflection high-energy electronic diffraction pattern indi-cates that flat substrate surfaces appear after plasma oxygen treatment. The ZnO thin films were grown at selectedtemperature of 650℃. The as-grown sample was further investigated by X-ray rocking curve (XRC), photolumines-cence, and Hall effect measure. ZnO single crystal thin films were prepared on c-plane Al_2O_3 substrate by plasma-assisted molecular beam epi-taxy (P-MBE). A flat surface of the sample was obtained by the monitoring of reflection high-energy electrondiffraction. The full width at half maximum of ZnO(002) rocking curve is 0.2°, this indicates that the sample issingle crysal thin films. From photoluminescence spectrum at room temperature, an intense free exciton emissionlocated at 3.30 eV was observed and no deep level emission appeared in visible region. Absorption spectrum showsthe evident absorption peak of free exciton located at 3.36 eV. Carrier concentration of the sample is 7×10~(16) cm~(-3)measured by Van De pauw method. This result corresponds with the reported carrier concentration in ZnO bulkcrystal. The above results indicate that the high quality ZnO single crystal thin film was obtained." @default.
- W2364216897 created "2016-06-24" @default.
- W2364216897 creator A5069041321 @default.
- W2364216897 date "2004-01-01" @default.
- W2364216897 modified "2023-09-23" @default.
- W2364216897 title "Growth of Zinc Oxide Single Crystal Thin Films by Plasma-assisted Molecular Beam Epitaxy" @default.
- W2364216897 hasPublicationYear "2004" @default.
- W2364216897 type Work @default.
- W2364216897 sameAs 2364216897 @default.
- W2364216897 citedByCount "0" @default.
- W2364216897 crossrefType "journal-article" @default.
- W2364216897 hasAuthorship W2364216897A5069041321 @default.
- W2364216897 hasConcept C110738630 @default.
- W2364216897 hasConcept C111368507 @default.
- W2364216897 hasConcept C113196181 @default.
- W2364216897 hasConcept C127313418 @default.
- W2364216897 hasConcept C171250308 @default.
- W2364216897 hasConcept C181966813 @default.
- W2364216897 hasConcept C185592680 @default.
- W2364216897 hasConcept C19067145 @default.
- W2364216897 hasConcept C192562407 @default.
- W2364216897 hasConcept C2777289219 @default.
- W2364216897 hasConcept C2779227376 @default.
- W2364216897 hasConcept C3792809 @default.
- W2364216897 hasConcept C43617362 @default.
- W2364216897 hasConcept C49040817 @default.
- W2364216897 hasConcept C73922627 @default.
- W2364216897 hasConcept C8010536 @default.
- W2364216897 hasConceptScore W2364216897C110738630 @default.
- W2364216897 hasConceptScore W2364216897C111368507 @default.
- W2364216897 hasConceptScore W2364216897C113196181 @default.
- W2364216897 hasConceptScore W2364216897C127313418 @default.
- W2364216897 hasConceptScore W2364216897C171250308 @default.
- W2364216897 hasConceptScore W2364216897C181966813 @default.
- W2364216897 hasConceptScore W2364216897C185592680 @default.
- W2364216897 hasConceptScore W2364216897C19067145 @default.
- W2364216897 hasConceptScore W2364216897C192562407 @default.
- W2364216897 hasConceptScore W2364216897C2777289219 @default.
- W2364216897 hasConceptScore W2364216897C2779227376 @default.
- W2364216897 hasConceptScore W2364216897C3792809 @default.
- W2364216897 hasConceptScore W2364216897C43617362 @default.
- W2364216897 hasConceptScore W2364216897C49040817 @default.
- W2364216897 hasConceptScore W2364216897C73922627 @default.
- W2364216897 hasConceptScore W2364216897C8010536 @default.
- W2364216897 hasLocation W23642168971 @default.
- W2364216897 hasOpenAccess W2364216897 @default.
- W2364216897 hasPrimaryLocation W23642168971 @default.
- W2364216897 hasRelatedWork W1965630582 @default.
- W2364216897 hasRelatedWork W1968083084 @default.
- W2364216897 hasRelatedWork W1989309535 @default.
- W2364216897 hasRelatedWork W1993514841 @default.
- W2364216897 hasRelatedWork W1999377436 @default.
- W2364216897 hasRelatedWork W2007105562 @default.
- W2364216897 hasRelatedWork W2009297636 @default.
- W2364216897 hasRelatedWork W2014340342 @default.
- W2364216897 hasRelatedWork W2017187949 @default.
- W2364216897 hasRelatedWork W2059402649 @default.
- W2364216897 hasRelatedWork W2059885231 @default.
- W2364216897 hasRelatedWork W2078275801 @default.
- W2364216897 hasRelatedWork W2158006301 @default.
- W2364216897 hasRelatedWork W2327338790 @default.
- W2364216897 hasRelatedWork W2328077494 @default.
- W2364216897 hasRelatedWork W2352732814 @default.
- W2364216897 hasRelatedWork W2355277613 @default.
- W2364216897 hasRelatedWork W2376853387 @default.
- W2364216897 hasRelatedWork W3147794050 @default.
- W2364216897 hasRelatedWork W2567291440 @default.
- W2364216897 isParatext "false" @default.
- W2364216897 isRetracted "false" @default.
- W2364216897 magId "2364216897" @default.
- W2364216897 workType "article" @default.