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• W2364249929 abstract "Ultrathin films were grown on Si(001) substrates by the electrodeposition technique. The method includes the annealing of a xerogel precursor deposit, mainly composed of , at . The effective formation of the monoclinic phase, after annealing, is strongly dependent on the time of storage in air. The films so obtained have [011]-preferred orientation and undergo a metal–insulator transition. The resistance change as a function of temperature is characterized by a broad hysteresis where two transition temperatures can be identified: and ." @default.
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• W2364249929 date "2011-01-01" @default.
• W2364249929 modified "2023-10-01" @default.
• W2364249929 title "Highly Oriented VO[sub 2] Thin Films Prepared by Electrodeposition" @default.
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• W2364249929 doi "https://doi.org/10.1149/1.3525275" @default.
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