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- W2364281350 abstract "This paper has studied experimentally the γ radiation damage and the annealing characteristicts of HCMOS devices. The radiation damage of static current is very sensitive. The sum dose of non-damage static current are 100Gy(“on”) and 300Gy (“off”). The sum dose of damage static current are 600Gy(“on”) and 2000Gy(“off”). The shift voltage varies with sum dose. The annealing effect of static current and shift voltage is very obvious." @default.
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- W2364281350 date "1991-01-01" @default.
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- W2364281350 title "γ Radiation Effects of HCMOS Devices" @default.
- W2364281350 hasPublicationYear "1991" @default.
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