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- W2364600263 abstract "ZnO films were grown on Si substrates by using plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. Low-temperature ZnO buffer layers deposited on Si substrates were used as intermediate layers for the growth. The samples were investigated by X-ray diffraction, Scanning electron microscope and photoluminescence (PL) spectra. It is discovered that the low-temperature buffer layer can reduce the lattice distortion caused by lattice misfit and difference of the thermal expansion coefficients. With a low-temperature grown ZnO buffer layer, the X-ray diffraction (XRD) of the ZnO film results a strong (002) diffraction peak. The full-width at half-maximum (FWHM) of the (002) ZnO peak becomes narrower and the value of it declines from 0.21° to 0.18°. Meanwhile, the PL spectra peak value of the sample at room temperature increases obviously. The crystal quality and optical properties of the ZnO films which are deposited at 610 ℃ on low-temperature buffer layer are improved significantly." @default.
- W2364600263 created "2016-06-24" @default.
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- W2364600263 date "2008-01-01" @default.
- W2364600263 modified "2023-09-24" @default.
- W2364600263 title "Effects of the Low-temperature Buffer Layer on the Properties of ZnO Thin Films" @default.
- W2364600263 hasPublicationYear "2008" @default.
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