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- W2364667076 abstract "A two-dimension numerical analysis for the electrical characteristics of Si / strained Si1-xGex/ Si hetero-junction-on-insulator p-M OSFET has been complished. The characteristics of the threshold voltage,transfer and output were studied. The results indicate that the value of the threshold voltage has a positive offset and the transfer characteristics are improved with increase of Ge content. The growth rate of the drain-source current becomes lower with the increase of Ge content under a fixed bias voltage on the device,compained by obvious kink in the output characteristics." @default.
- W2364667076 created "2016-06-24" @default.
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- W2364667076 date "2015-01-01" @default.
- W2364667076 modified "2023-09-26" @default.
- W2364667076 title "Two-dimensional numerical analysis for the electrical characteristics of Si/Strained Si_(1-x)Ge_x/Si hetero-junction-on-insulator p-MOSFET" @default.
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