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- W2364752112 abstract "The quality of low temperature bonded silicon wafers has been improved by using a modified RCA cleaning process.A slow annealing process is used to split the bonded wafers in order to fabricate Smart Cut SOI (Silicon On Insulator) materials.High temperature pressure sensor with a double islands beam membrane structure has been successfully fabricated with these SOI materials.The results of measurement on SOI pressure sensors reveal that the output voltage is not changed obviously at about 150℃.If the package process has been improved,the SOI pressure sensors are expected to work normally at 300℃,much higher than the bulk silicon pressure sensors (work temperature less than 120℃).The sensitivity of the SOI pressure sensor is about 63mV/(MPa·5V),about 7 times as much as that of the poly Si pressure sensor that is fabricated with the same layout design and process parameters." @default.
- W2364752112 created "2016-06-24" @default.
- W2364752112 creator A5084488160 @default.
- W2364752112 date "2001-01-01" @default.
- W2364752112 modified "2023-09-23" @default.
- W2364752112 title "High Temperature Pressure Sensor Fabricated with Smart Cut SOI Materials" @default.
- W2364752112 hasPublicationYear "2001" @default.
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