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- W2364978077 abstract "The activity and the uniformity of SI-GaAs by Si +, Si +/As + implantation have been studied. The results showed that under the same condition, the activity is various with the growth methods of Horizontal Bridgman(HB) and Liquid Encapsulated Crochizoski (LEC). Usually the activity by HB higher than that of LEC. For HB method, the activity of (100)A (100)B. The activity by dual ion implantation of Si +/As + higher than that by Si + only. Dual ion implantation can improve the uniformity which caused by the EL2 distribution in LEC-SI-GaAs Substrate. The profile Hall measurement of LEC-SI-GaAs(EL2) by Si +/As + implantation indicated that mobility of active layer is uniform, it can reach to 4000 cm 2/V.s. The Raman characterization showed that the complex which involved in As vacancies process positive acceptors can be reduced even eliminated by high dose Si +/As + implantation. This is the main reason for improving the quality of implanted layer of the GaAs materials." @default.
- W2364978077 created "2016-06-24" @default.
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- W2364978077 date "2000-01-01" @default.
- W2364978077 modified "2023-09-25" @default.
- W2364978077 title "An Investigation of Activity and Uniformity For SI-GaAs By Ion Implantation" @default.
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