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- W2365095540 abstract "The SiO 2/Si structure was formed when ploysilane coated on Si substrate was treated by O 2 plasma technique.The flat-band voltage was measured by the conventional MOS capacitance method. The results show that the flat-band voltage was dependent on the conditions of O 2 plasma such as reactant pressure,treatment time,and power. When an optimal treatment condition is selected,it will be up to a minimal value in the range of -0.55 ～-0.88 V,which is less than that of SiO 2/Si structure by thermal oxidation under the same experimental environment." @default.
- W2365095540 created "2016-06-24" @default.
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- W2365095540 date "2002-01-01" @default.
- W2365095540 modified "2023-09-25" @default.
- W2365095540 title "Influence of Treatment Conditions on the Flat-band Voltage of Poly-SiO_2/Si Structure" @default.
- W2365095540 hasPublicationYear "2002" @default.
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