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- W2365204893 abstract "ISSG(in-situ steam generation) annealing as a new method was used to compensate this thickness non-uniformity.Under the optimized annealing condition,excellent thickness uniformity could be achieved consistently.The final oxide films also show better electrical quality comparing to pure O2 annealing.This result offers a convenient and effective solution for improving thickness variation in LPCVD furnace oxide deposition processes." @default.
- W2365204893 created "2016-06-24" @default.
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- W2365204893 date "2005-01-01" @default.
- W2365204893 modified "2023-09-25" @default.
- W2365204893 title "Forming Uniform Tunnel Oxide by ISSG Annealing for Flash Memory Application" @default.
- W2365204893 hasPublicationYear "2005" @default.
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