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- W2365430090 abstract "The ideal diluted magnetic semiconductors has favorable room-temperature ferromagnetism.Although AlN diluted magnetic semiconductor has wide band gap and good light-admitting quality,it has not been widely applied due to the unsatisfactory replicability of the experiment.Based on first principle of the density functional theory,we calculate the electric structure of AlN semiconductors doped by B element.The analysis of the calculated electric structure displays that an evident local magnetic moment change arises on doped AlN semiconductors.The magnitude of the local magnetic moment is 2μB." @default.
- W2365430090 created "2016-06-24" @default.
- W2365430090 creator A5033077868 @default.
- W2365430090 date "2015-01-01" @default.
- W2365430090 modified "2023-09-24" @default.
- W2365430090 title "A First Principle Study of Local Magnetic Moment on Non-Magnetic Elements Doped AlN" @default.
- W2365430090 hasPublicationYear "2015" @default.
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