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- W2365526175 abstract "The epitaxial growth of 3C-SiC epilayer has been focused on for a long time in the SiC research fields.Hetero-epitaxial growth of 3C-SiC on silicon substrate is one of the potential approaches to realize large-size and low-cost 3C-SiC epilayers.It has been attracting a great deal of attention in the past few decades.However,it is still a challenge to obtain high quality 3C-SiC epitaxial layers due to the large lattice constant mismatch(20%) and the thermal expansion coefficient mismatch(8%) between silicon and 3C-SiC.In this paper,we review the basic process of hetero-epitaxial growth of 3C-SiC on silicon substrate and the recent progress in defects and controllable doping.The future research hot-spots are summarized." @default.
- W2365526175 created "2016-06-24" @default.
- W2365526175 creator A5014355554 @default.
- W2365526175 date "2011-01-01" @default.
- W2365526175 modified "2023-09-23" @default.
- W2365526175 title "Research Progress in Hetero-epitaxial Growth of 3C-SiC on Si Substrate" @default.
- W2365526175 hasPublicationYear "2011" @default.
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