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- W2367865625 abstract "In order to find a suitable method to deposit lead-germanium-telluride films,thin-films were deposited on silicon substrates using electron beam evaporatioa The resource material is Pb_(0.78)Ge_(0.22)Te bulk ingot X-ray diffraction(XRD),scanning electron microscope(SEM), energy-dispersive analysis by X-ray(ED AX) were used to investigate the microstructure and the stoichiometry of the thin-films.It is shown that thin-films of lead-germanium-telluride are polycrystalline and have a preferred orientation.It is also revealed that the grains appear as rectangles and no other phases and oxides are detected.It can be concluded that compared with resistance evaporation,high kinetic energy of particles evaporated by electron beam favor the formation of perfect crystalline in thin films." @default.
- W2367865625 created "2016-06-24" @default.
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- W2367865625 date "2010-01-01" @default.
- W2367865625 modified "2023-09-27" @default.
- W2367865625 title "Microstructure and stoichiometry of lead-germanium-telluride films desposited using electron beam evaporation on silicon substrates" @default.
- W2367865625 hasPublicationYear "2010" @default.
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