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- W2368774805 abstract "Homogeneous,highly crystalline Se and Te nanowires(NWs) were prepared by a chemical solution process using selenious acid and orthotelluric acid as precursor materials.HRTEM images show that the Se or Te NW are single crystalline with their growth direction along the ,with the helical chains of Se or Te atoms parallel to the longitudinal axis.Se and Te NWs field effective transistor device were prepared by photolithography or e-beam lithography.The device performance show that Se or Te is p type semiconductor with hole mobility about 30.7,70cm2 V-1 s-1 respectively.This result is very important to the application of nanoscale electronic device." @default.
- W2368774805 created "2016-06-24" @default.
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- W2368774805 date "2008-01-01" @default.
- W2368774805 modified "2023-09-27" @default.
- W2368774805 title "Controlled Synthesis of VI Group Element Semiconductor Nanowires and Their Nano-electronic Properties" @default.
- W2368774805 hasPublicationYear "2008" @default.
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