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- W2368952363 abstract "As dimension of middle-of-line contacts scale down, the Tungsten (W) gap-fill capability is critical, and we starts to see function failure in SRAM and logic circuit caused by W-voids. We had observed that formation of W-voids is related to the contact profile, nucleation/barrier on sidewall, and deposition methods. Furthermore, even those initially good W-plugs are formed, the subsequent process steps may damage the W-plug toward voids and they lead to high resistance and failures in logic circuit and SRAM. We analyzed mechanisms and illustrated solutions systematically with in-line detection method also discussed for technology development as well as manufacturing in paper." @default.
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- W2368952363 date "2016-03-01" @default.
- W2368952363 modified "2023-09-24" @default.
- W2368952363 title "Elimination of Tungsten-voids in middle-of-line contacts for advanced planar CMOS AND FinFET technology" @default.
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- W2368952363 doi "https://doi.org/10.1109/cstic.2016.7464004" @default.
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