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- W2368967528 abstract "The origin structure of a-Si∶H films is closely related to the recrystallizaiton temperature,the grain size and electrical properties of polycrystalline silicon films,which were formed by recrystallization annealing of a-Si∶H films.While the origin structure of a-Si∶H films depends strongly on the deposition condition.The high quality polycrystalline silicon film with the mean grain size of several hundread nm,the largest grain size of 2μm and the dark conductivity of 1.62 (Ω·cm) -1 has been obtained through low annealing temperature of 550℃,the a-Si∶H films deposited at high rate by the PCVD method." @default.
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- W2368967528 date "2000-01-01" @default.
- W2368967528 modified "2023-09-23" @default.
- W2368967528 title "Influence of the a-Si∶H Films in Structure on the Properties of Polycrystalline Silicon Films" @default.
- W2368967528 hasPublicationYear "2000" @default.
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