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- W2369581164 abstract "Nitrogen-doped nanocrystalline diamond film were deposited on p-type Si substrates with saturated solution of C3H6N6 in CH3OH as nitrogen source by DC hot-cathode plasma chemical vapour deposition(PCVD) with different Ar concentration.The prepared nitrogen-doped diamond films were analyzed by SEM,XRD,Raman spectroscopy and Hall system,so the influences of Ar concentration on the doped diamond film are shown.With the increase of Ar concentration,the grain sizes of the films decrease and the airplane surface is presented;because the residual compressive stress influenced by the shift of the Raman G-peak decreases firstly and then increases;the conductivity of the films become better.With the introduction of C3H6N6,the high qualified diamond films with 30-50 nanometers crystalline are prepared in the condition of low Ar circumstance.The flow ratio of H2/Ar is 100/100,where the content of Ar is strongly lower than the threshold in H2/Ar systems." @default.
- W2369581164 created "2016-06-24" @default.
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- W2369581164 date "2012-01-01" @default.
- W2369581164 modified "2023-09-23" @default.
- W2369581164 title "Influence of Ar Concentration on Nitrogen-doped Diamond Film" @default.
- W2369581164 hasPublicationYear "2012" @default.
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