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- W2370036152 abstract "Silicon pn diodes are prepared by boron ion implantation into Czochralski(CZ) n-type silicon substrate.The influences of the implanted boron dose,energy,and temperature on the electroluminescence(EL) efficiency of the silicon p-n junctions have been systematically studied.With increasing the boron dose,the EL efficiency of the silicon pn diode has been improved remarkably. Efficient EL with power efficiency up to 0.12% is observed for boron concentrations of about twice the solubility limit at the annealing temperature,which are 2-3 orders of magnitude than that of traditional silicon pn diodes.The EL spectra at low temperature exhibits two peaks from excitons bound to the boron implantation induced defects.With an increase of temperature,the two peaks are quenched by thermal dissociation of the bound excitons into free electrons and holes,which brings to an anomalous increase of the EL intensity from band to band free electron-hole recombination." @default.
- W2370036152 created "2016-06-24" @default.
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- W2370036152 date "2009-01-01" @default.
- W2370036152 modified "2023-09-25" @default.
- W2370036152 title "Efficient Silicon Light-emitting pn Diode Prepared by Ion Implantation Locally-doped Defects" @default.
- W2370036152 hasPublicationYear "2009" @default.
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