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- W2370748837 abstract "InGaN:Mg films were grown by metal-organic chemical vapor deposition(MOCVD),and the properties of InGaN:Mg the materials with different source fluxes were studied.The optical and electrical properties show that when epitaxial growth temperature is at 760 ℃,the TMIn molar flux is certain,the In molecomposition increases with the increase of CP2Mg and Ⅲ family source molar ratio(/[Ⅲ]),and the hole concentration also increases linearly.When /[Ⅲ] is 1.12×10-3,the high hole concentration of 4.78×1019 cm-3 is obtained.Moreover,the electro-luminescence intensity of the light-emitting diodes(LEDs) with InGaN:Mg as contact layer is enhanced by 28% compared with conventional LEDs." @default.
- W2370748837 created "2016-06-24" @default.
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- W2370748837 date "2011-01-01" @default.
- W2370748837 modified "2023-09-26" @default.
- W2370748837 title "Properties of the InGaN:Mg with roughened surface and high hole concentration and its light-emitting diode application" @default.
- W2370748837 hasPublicationYear "2011" @default.
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