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- W2370762013 abstract "SiGe virtual substrate in strain Si channel PMOSFETs is always too thick (1μm). This paper presents a method to fabricate strain Si channel PMOSFETs on 240 nm thick Si0.8Ge0.2 virtual substrates. The fabricated transistors show good dc characteristics. The transconductance and hole mobility enhance 30% and 50%, respectively, compared with that of conventional bulk Si. The device performance is comparable to devices achieved on 1μm thick SiGe virtual substrate layer." @default.
- W2370762013 created "2016-06-24" @default.
- W2370762013 creator A5071753073 @default.
- W2370762013 date "2007-01-01" @default.
- W2370762013 modified "2023-09-25" @default.
- W2370762013 title "Strained-Si Channel PMOSFET on 240nm Thick Si_(0.8)Ge_(0.2) Virtual Substrates" @default.
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