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- W2370939025 abstract "Ferroelectric film Bi3.15Nd0.85Ti3O12(BNT) was prepared on Pt/Ti/SiO2 / p-Si substrate using sol-gel method,and the BNT film was etched with ICP etching process.The etch rate for BNT film reached maximum when Ar∶Cl2 was about 1∶4.After etching,the ferroelectric property of the BNT film was somewhat degraded,but its brim was straight and clear.The residual stress of the etched BNT film was first increased,and then decreased with increasing Ar content." @default.
- W2370939025 created "2016-06-24" @default.
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- W2370939025 date "2011-01-01" @default.
- W2370939025 modified "2023-09-24" @default.
- W2370939025 title "ICP Etching of Bi_(3.15)Nd_(0.85)Ti_3O_(12) Films and Study on Its Property" @default.
- W2370939025 hasPublicationYear "2011" @default.
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