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- W2371026502 abstract "A new inversion layer charge model for SiC MOSFET is established by introducing the effect of excited states of impurities.The exploration is based on the one-dimensional numerical solving of Poisson's equation.The results show that,in inversion layer,the density of electron decreases under the effect of the excited states of impurities.The effect of the excited states is relatively big in weak inversion,and it depends on temperature,impurities concentration and active energy of impurities.In addition,there has the temperature at which the effect of the excited states reaches the top,and the temperature rises with impurities concentration and active energy of impurities increasing." @default.
- W2371026502 created "2016-06-24" @default.
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- W2371026502 date "2007-01-01" @default.
- W2371026502 modified "2023-09-26" @default.
- W2371026502 title "Introducing the Excited States of Impurities into Inversion Layer Charge Model for SiC-MOSFET" @default.
- W2371026502 hasPublicationYear "2007" @default.
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