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- W2372028962 abstract "Silicon thin films with different crystalline ratio(Xc) had been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on the performance of the materials and on the relationship between micro-structure and opto-electronic properties were studied by Raman measurements and σ_(ph),σ_d.Then the measurements of light absorption coefficient(α) and ημτ were conducted before,during and after light soaking.The results indicated that the microcrystalline silicon near the transition region is suitable to prepare device grade microcrystalline silicon,and that the amorphous region of the material is responsible to the light induced degradation." @default.
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- W2372028962 date "2006-01-01" @default.
- W2372028962 modified "2023-10-15" @default.
- W2372028962 title "Stability of Device Grade Microcrystalline Silicon Materials for Solar Cells" @default.
- W2372028962 hasPublicationYear "2006" @default.
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