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- W2372180914 abstract "The surface blistering kinetics of Ge implanted by H ion based on different implantation conditions is studied for germanium layer transfer to Si O2 to obtain Ge OI. The raw Ge surface based on smart-cut technology was etched by chemical solution( mixture of ammonia,H2O2 and deionized water) at room temperature for Ge surface planarizing and removing the amorphous Ge generated by H ion implantation. The characterizations were performed by atomic force microscopy( AFM) and cross-section transmission electron microscopy( X-TEM). The experimental results demonstrate that the surface roughness of the splitting germanium is improved the amorphous Ge layer originated by H implantation is removed while maintaining perfect germanium pattern lattice." @default.
- W2372180914 created "2016-06-24" @default.
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- W2372180914 date "2015-01-01" @default.
- W2372180914 modified "2023-09-23" @default.
- W2372180914 title "Ge Surface Corrosion in GeOI Preparation by Smart-cut Method" @default.
- W2372180914 hasPublicationYear "2015" @default.
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