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- W2372766479 abstract "In recent years, nitrogen-doped czochralski silicon (NCZ)has attracted intensive attention from the industrial circle and academia. Oxygen precipitation is an important subject of defect engineering for CZ silicon. This paper overviews the latest achievements in the research of oxygen precipitation in NCZ silicon. The effects of nitrogen on the formation of grown-in oxygen precipitates, oxygen precipitates formed in the subsequent thermal cycles and the morphology of oxygen precipitates in NCZ silicon are elucidated in detail, thus the advantages of NCZ silicon are revealed." @default.
- W2372766479 created "2016-06-24" @default.
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- W2372766479 date "2006-01-01" @default.
- W2372766479 modified "2023-09-27" @default.
- W2372766479 title "The Advance of Research on Oxygen Precipitates in NCZ Silicon" @default.
- W2372766479 hasPublicationYear "2006" @default.
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