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- W2372854229 abstract "The methods for protecting InP surface against degradation during annealing,including encapsulant and encapsulant-free techniques;rapid thermal annealing of InP implanted layers;implanted ion species and some profiles of typical dopants,etc.,they are all the key techniques concerning ion implantation into semi-insulating InP,and have been reviewed synthetically as well." @default.
- W2372854229 created "2016-06-24" @default.
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- W2372854229 date "1995-01-01" @default.
- W2372854229 modified "2023-09-24" @default.
- W2372854229 title "Ion implantation of semi-insulating InP materials" @default.
- W2372854229 hasPublicationYear "1995" @default.
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