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- W2374182004 abstract "Two kinds of aluminum films were deposited by vacuum thermal evaporation and magnetron sputtering.They were used to induce polycrystalline silicon films from glass/Si/SiO2/Al tandem structure by aluminum-induced crystallization(AIC) process.The induced films were characterized with X-ray diffraction(XRD),optical microscopy and Raman spectroscopy.The influence of different aluminum deposition technique on the property of the polycrystalline silicon films by AIC was studied.The results show that both kinds of aluminum films could induce large grain polycrystalline silicon films(~100μm) with strong preferential(111) orientation.But compared with magnetron sputtering,the polycrystalline silicon films induced by aluminum deposited by vacuum thermal evaporation have smaller stress,higher crystalline quality,and larger crystallization rate." @default.
- W2374182004 created "2016-06-24" @default.
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- W2374182004 date "2011-01-01" @default.
- W2374182004 modified "2023-09-23" @default.
- W2374182004 title "Influence of Aluminum Deposition Technique on the Property of Polycrystalline Silicon Films by AIC" @default.
- W2374182004 hasPublicationYear "2011" @default.
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